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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors D45H8 DESCRIPTION With TO-220C package Fast switching speeds Low collector saturation voltage APPLICATIONS For general purpose power amplifications and switching regulators,converters and power amplifiers applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base TC=25ae Ta=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -5 -10 -20 50 UNIT V V V A A W Open collector Collector current (DC) Collector current-Peak Total power dissipation 1.67 150 -55~150 ae ae Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector capacitance CONDITIONS IC=-10mA IB=0, IC=-8A ;IB=-0.4A IC=-8A ;IB=-0.8A VCE=-80V; VBE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-1V IC=-4A ; VCE=-1V IC=-0.5A ; VCE=-10V f=1MHz ; VCB=-10V 60 40 40 MIN -60 TYP. D45H8 SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 fT Ccb MAX UNIT V -1.0 -1.5 -10 -0.1 |I V V A mA MHz pF Switching times ton ts tf Fall time Turn-on time Storage time CHA IN E SEM NG IC=-5A IB1=- IB2=-0.5A OND IC TOR UC 230 135 0.5 0.10 |I |I ns s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE D45H8 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.10mm) 3 |
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